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Epson, Fujitsu create next-gen FRAM technology

Posted: 11 Jul 2005 ?? ?Print Version ?Bookmark and Share

Keywords:fram? non-volatile memory? ferroelectric random access memory?

Seiko Epson Corp. (Epson) and Fujitsu Ltd have jointly developed next-generation technology for ferroelectric random access memory (FRAM) non-volatile memory.

Targeted to be completed in 2006, the companies expect the next-generation FRAM to be one-sixth the cell area of conventional FRAMs in the market. Both Epson and Fujitsu plan to develop memory core process technology that features minimal constraints on the number of read/write cycles that can be executed.

In recent years, portable information devices and intelligent home appliances have become increasingly sophisticated. As a result, demand for FRAM non-volatile memory has rapidly increased, as it fulfills a wide range of market needs such as low power consumption and high read/write speeds with greater advantages compared to flash memory and electrically erasable and programmable read only memory (EEPROM). FRAM features non-volatile RAM functions in addition to ROM functions, thereby making it one of the best memory devices available and an ideal memory solution for system Large-Scaled Integrated circuits (LSIs).

Through their joint development of next-generation FRAM technology, the two companies plan to combine their elemental technologies, such as for FRAM materials and miniaturization processes, to enable shorter development periods.

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