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Aviza, SEZ link to clean-up atomic layer deposition

Posted: 13 Jul 2005 ?? ?Print Version ?Bookmark and Share

Keywords:atomic layer deposition? ald?

Chip equipment vendor Aviza Technology Inc. is joining forces with wafer cleaning company SEZ Group to work on atomic layer deposition (ALD) film removal for next-generation IC manufacturing.

Under a joint development agreement, Aviza and SEZ intended to work together concentrating on the wafer backside and bevel edge.

Due to their intricate composition, advanced films targeted for 45-nanometer high-k gate dielectrics, such as hafnium oxide (HfO), hafnium silicate (HfSiO) and hafnium silicate oxynitride (HfSiO/N), as well as metals like ruthenium, pose challenges at these film-removal stages.

The challenge is to selectively remove contamination caused by these materials from the backside and bevel edge of the wafer with a controlled wrap to the front side in order to prevent cross-contamination and particle generation. These can cause issues with device performance, film delamination, lithography problems, and ultimately, device yield, the companies said.

"The development of materials and processes for ALD applications is key to accelerating the ALD roadmap and driving the adoption of ALD," said Jon Owyang, director of ALD product management at Aviza Technology, ina statement. "By entering into a collaboration with SEZ, we intend to leverage our core areas of expertise to develop advanced manufacturing and process solutions for our customers that meet requirements for backside trace materials and backside particle levels."

- Peter Clarke

EE Times





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