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Hynix, NanoAmp, Winbond to co-develop CellularRAM specs

Posted: 31 Aug 2005 ?? ?Print Version ?Bookmark and Share

Keywords:hynix semiconductor? nanoamp solutions? cellularram? sram? psram?

The CellularRAM work group announced the addition of Hynix Semiconductor Inc., NanoAmp Solutions Inc. and Winbond Electronics Corp. to its membership.

The members will join Cypress Semiconductor Corp., Infineon Technologies and Micron Technology Inc. to create common specifications for high-performance pseudo-SRAM (PSRAM) devices designed to meet the growing memory density and bandwidth demands of future 2.5G and 3G handset designs.

The CellularRAM work group has developed three generations of specifications for high-bandwidth devices ranging in densities of 16Mb to 256Mb.

Continuing to elevate the standard for performance and low power in diverse mobile applications, the group is currently working on a 4G specification to further enhance suitability of CellularRAM architecture-based products for use with high-bandwidth baseband and application processors.

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