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FET surpasses GaAs FETs

Posted: 15 Sep 2005 ?? ?Print Version ?Bookmark and Share

Keywords:toshiba? gallium nitride? gan? power field effect transistor? fet?

Toshiba Corp. has announced development of a gallium nitride (GaN) power field effect transistor (FET) that is touted to surpass the operating performance of the gaas' RF dominance" target=_blank>gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications. The company said that this new transistor achieves output power of 174W at 6GHz, the highest level of performance yet reported at this frequency.

According to the press release, Toshiba was able to realize this performance enhancement by optimizing the epitaxial layer and chip structures for 6GHz-band operation and by adopting a four-chip combination structure to minimize heat build-up. The result is a GaN power FET with eight times the power density of a GaAs FET and the world's highest output power at the 6GHz frequency level.

Epitaxial layer structure

The power FETs adopt a High Electron Mobility Transistor (HEMT) structure. By optimizing conditions of doping and the thickness of the AlGaN and GaN layers, Toshiba explained, they were able to achieve outstanding performance. The company also processed and optimized the FET unit structure, including gate length and distance of source and drain electrodes, which produced high performance in the C-band and higher frequencies.

Additionally, Toshiba integrated four small chips into a single package that fully utilizes its advanced power-combining technology. This assures heat dissipation and high power output without any deterioration in material characteristics, added the company. At the same time, Toshiba adopted the stepper exposure technology that is better suited to mass production instead of the electron beam exposure technology which is commonly used in lithography process for GaN power FETs in the C band and higher frequencies.



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