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Samsung announces 70nm-based 512Mb DDR2 SDRAM

Posted: 20 Oct 2005 ?? ?Print Version ?Bookmark and Share

Keywords:samsung electronics? ddr2 sdram? dram?

512Mb DDR2 SDRAM used 70nm process

Samsung Electronics Co. Ltd announced that it has developed the first 512Mb DDR2 SDRAM using the 70nm process, which is said to be the smallest process technology yet applied to a DRAM device. According to Samsung, the new 70nm technology maintains continuity with the 80nm and 90nm processes it is currently using in most DRAM production. The difference, however, is that the number of chips yielded per wafer will be at least 100 percent higher than could be obtained with 90nm technology, said the company.

The press release further said that Samsung's Metal-Insulator-Metal (MIM) capacitor technology and 3D transistor architecture, known as Sphere-shaped Recess Channel Array Transistor (S-RACT), led to the new 70nm process technology. These advancements, said Samsung, have been applied to overcome the limitations of stacked DRAM cells and vastly improve the data refresh function, critical to the 70nm 512Mb DRAM.

The 70nm process technology is scheduled to be used in production beginning second half of 2006 for 512Mb, 1Gb and 2Gb densities.

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