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Atmel announces new 0.18?m RF CMOS process

Posted: 14 Nov 2005 ?? ?Print Version ?Bookmark and Share

Keywords:atmel? at58900? rf cmos process technology? asic? wlan?

Atmel Corp. announced its 0.18?m AT58900 RF CMOS process technology for ASIC foundry customers whose products require high speed, low power RF devices, such as those used in WLAN, wimax and zigbee applications. This new process is manufactured on 200mm wafers, and features 1.8V CMOS transistors and a vast array of passive components that include low tolerance analog poly resistors, N+ and P+ S/D resistors, and up to four metal layers. RF pads are included to help minimize interface impedance.

Optional features include single poly EEPROM for on-chip analog trimming or low density data storage, as well as high Q, low noise metal-insulator-metal capacitors, and P+/N- varactors for optimum linearity. On-chip thick aluminum inductors are available for impedance matching, which reduces off-chip component requirements. Designers have access to fifth and sixth metal layers to help simplify signal routing. In addition, a 3.3V input/output interface can be incorporated eliminating the need for off-chip voltage doublers.

Atmel offers frequent multi-project wafer (MPW) runs that provide an economical means for customers to debug prototype RF devices without purchasing an entire mask set. Multiple customers can share the same reticle and wafer-run, thereby reducing the cost of entry. Prices for MPW runs are dependent on the die size.

The company also accepts minimum order quantities (MOQ) as low as $250,000 per year for production foundry products. All backend services, including test, characterization, qualification, design verification and supply chain management, are available if required.

Atmel's 58900 0.18?m RF CMOS process is already available.




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