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M/A-COM expands power transistor and power module line-up

Posted: 15 Nov 2005 ?? ?Print Version ?Bookmark and Share

Keywords:m/a-com? tyco electronics? radio frequency? rf? microwave?

M/A-COM, a business unit of Tyco Electronics, recently announced an extension of their bipolar power transistors and power module families, designed specifically for avionics and pulsed radar products and applications.

The new PH1090-700B bipolar power transistor is targeted at IFF and other avionics applications in the 1,030MHz to 1,090MHz frequency band. This NPN common base Class C pulse power transistor features a saturated output power that exceeds 700Wpk at 325s pulse width and 2 percent duty cycle. It is assembled in a hermetic/metal package for high reliability.

The silicon bipolar line-up consisting of the MAPRST0002 and the PH1214-300M deliver typical gain of 18dB at 1505s pulse width and 10 percent duty cycle. The saturated power output typically exceeds 360Wpk and guaranteed collector efficiency for each device is 50 percent, with typical values in the high 50 to low 60s. According to the press release, the line-up was specifically designed to support ATC pulsed radar applications in the 1,200MHz to 1,400MHz frequency band. Both devices are NPN, common base Class C microwave power transistors assembled in hermetic/metal packages for high reliability.

The silicon bipolar line-up consisting of the MAPRST1214-06UF, MAPRST1214-30UF and MAPRST1214-150UF power transistors are designed specifically for ultra long pulse radar applications in the 1,200MHa to 1,400MHz bandwidth. They provide 150Wpk, and deliver a minimum 24dB gain with minimum collector efficiencies of 45 percent for the 150UF and 30UF (typical >50 percent) and 40 percent for the 6UF. Devices are rated for operation up to 6mS pulse width and 25 percent duty cycle and are assembled in hermetic ceramic/metal packages for ultra low thermal resistance and high reliability.

The new S-band pulse power module employs Wilkinson combining techniques to provide over 300Wpk saturated output power from two NPN silicon bipolar Class C power transistors in the 2.7GHz to 2.9GHz ATC band. Guaranteed power gain is 7.5dB and collector efficiency is 38 percent at 1005s pulse width and 10 percent duty cycle. Typical values exceed 8dB and 45 percent respectively, at a collector voltage of 38Vdc. M/A-COM added that the small size and thick copper backing of the PCB offers superior thermal management, while the 50-ohm, modular approach offers the PA designer excellent advantages in cost and ease of design.

The PH1090-700B bipolar power transistor, bipolar power transistor line (MAPRST0002 and PH1214-300M), ultra long pulse power transistor line (MAPRST1214-06UF, MAPRST1214-30UF and MAPRST1214-150UF), and the S-band pulse power module are available through the companys worldwide direct field sales force and through authorized distributors.

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