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TAEC power amp boosts WLAN, PHS and Bluetooth signals

Posted: 24 Nov 2005 ?? ?Print Version ?Bookmark and Share

Keywords:Toshiba America Electronic Components? Silicon Germanium? SiGe? Bipolar Complementary Metal Oxide Semiconductor? BiCMOS?

BiCMOS <a href=power amplifier" ALIGN="RIGHT">

Toshiba America Electronic Components Inc. (TAEC) announced the release of a new medium power Silicon Germanium (SiGe) BiCMOS power amplifier that is a suitable solution for 1.9GHz to 2.5GHz band wireless applications, including wireless LAN (WLAN), Personal Handy System (PHS) and Bluetooth.

The new TA4401CT is designed with three cascaded RF stages optimized for linearity, efficiency and low-power consumption. This device delivers IEEE802.11g standard 18dBm average output power with 27.5dB gain and 3 percent Error Vector Magnitude (EVM) performance, while consuming 125mA from a 3.3Vdc supply. It can also meet PHS specifications with up to 23dBm output power and 35dB gain with a 210mA supply current.

The TA4401CT is housed in a low profile Pb-free1 2.9mm 16-pin Chip Scale Package (CSP), and is priced at $1 each. Samples of this device are currently available, with volume production scheduled to begin 2Q 2006.

- Janine Love
eeProductCenter




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