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NOR flash supports 133MHz speed

Posted: 07 Dec 2005 ?? ?Print Version ?Bookmark and Share

Keywords:STMicroelectronics? st? NOR flash memory? pseudo-static RAM? PSRAM?

To meet the low-power requirements of the 3G handheld sector, STMicroelectronics NV has started to manufacture 1.8V, 256Mb and 512Mb NOR flash memory devices using 90-nm multi-level cell (MLC) process technology.

The memory subsystems are housed in multi-chip packages and combine NOR flash memory with pseudo-static RAM (PSRAM) or low-power SDRAM in a single ball-grid array (BGA). They come in a range of combinations, including 512Mb flash with 64Mb PSRAM, part number M36P0R9060; 512Mb flash with 128Mb PSRAM, part number M36P0R9070; and 512Mb flash and 128Mb of LPSDRAM, part number M39P0R9070. Also available are triple-stacked versions that meet 1Gb density requirements, as well as multi-chip packages with 256Mb NOR flash.

The 1.8V NOR flash devices support read speeds of up 133MHz.

"Read speed is a distinctive benefit from flash NOR memory subsystems, used from applications to provide fast code execution-in-place," said William Vespi, product and strategic marketing, wireless-HD NOR flash memory division. "A faster NOR memory typically allows customers to require less RAM at application level. Specific architecture solutions have been developed to reach up to 133MHz, though supporting 108MHz and 60MHz when requested."

Vespi also said that the devices provide program throughput of 0.5MBps, which he claims is three times higher compared with competitive NOR flash parts.

The M36P0R9060 has one die of 512Mb flash memory, organized as 32Mb x 16 (multiple bank, multi-level, burst) and one die of 64Mb PSRAM configured as 4Mb x 16. And the M36P0R9070, also with 512Mb flash, has one die of 128Mb PSRAM organized as 8Mb x 16.

The flash memory offers a random access time of 93ns and a 4?s typical word program time using buffer enhanced factory program command. The PSRAM offers an access time of 70ns.

The M39P0R9070 is also a 512-Mbit part, but includes one die of 128Mb SDRAM, configured as four banks of 2Mb x 16. The low-power SDRAM has a maximum clock frequency of 104MHz.

All the combinations included in the two new families are available now and offered in a range of BGA packages. The NOR flash with PSRAM devices is housed in a LFBGA107, 8-by-11mm (ZAC) and the NOR flash with LPSDRAM in xFBGA105, 9-by-11mm (ZAD). Pricing in volume quantities is $12 for the M36P0R9060; $14 for the M36P0R9070; and $13 for the M39P0R9070.

- Ismini Scouras
eeProductCenter




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