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Voltaix receives NSF grant to develop SiGe

Posted: 03 Jan 2006 ?? ?Print Version ?Bookmark and Share

Keywords:silicon-germanium technology? Voltaix? National Science Foundation? NSF? John Kouvetakis?

Voltaix Inc. has been awarded a grant from the National Science Foundation (NSF) SBIR/STTR Program to accelerate the commercialization of silicon-germanium (SiGe) technology.

The approach deploys molecules designed by Prof. John Kouvetakis and co-workers at Arizona State University (ASU) to enable new approaches to computer chip design and fabrication that is said to reduce power consumption and increase performance. The technology enables low temperature deposition of high germanium content SiGe films that could change the production of CMOS-integrated MEMS.

"Our customers need new materials-based solutions to achieve their technology development goals," said Dr. John de Neufville, president of Voltaix, in a statement. "The sponsorship of the NSF enables us to bring this solution to our customers more quickly and extends our leadership in SiGe technology."

The grant provides support of the project "STTR Phase I: Germyl Silanes- Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Photonics." The funds will support development efforts at Voltaix and ASU.

Voltaix secured global rights to the technology through a licensing agreement with Arizona Technology Enterprises, Arizona State University's technology commercialization company.

EE Times




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