ST MOSFET tailored for auto market

STMicroelectronics (ST) has announced a new high-current power MOSFET, which is said to benefit from ST's proprietary STripFET technology to achieve very low on-resistance.

Designed specifically for the automotive market, the STD95N04 is a 40V standard level DPAK device with a maximum RDS(on) of 6.5 m?.

The 80A device is intended for use in DC/DC converters, motor control, solenoid drivers and antilock braking systems. According to ST, this new product is competitive in both price and the critical on-resistance performance when compared against products manufactured using conventional "trench" technology. Typical RDS(on) is in the region of 5 m? and maintains standard threshold drive requirement.

The STD95N04 is compliant with the AEC Q101 stress test qualification for discrete semiconductors. This device's maximum operating temperature is 175°C and is 100 percent avalanche rated.

STripFET technology
The STripFET technology is based on increased cell density, which is said to result in lower on-resistance and losses while using less silicon area. Other power MOSFETs now in development will use the same technology to address DPAK (30V, logic level, 4.5 m?, typical at 4.5V) and D2PAK (40V, standard level, 2 m? typical at 10V) requirements.

The STD95N04 is available in volume orders in DPAK and TO-220 packages. Pricing is 38 cents in quantities of 10,000 pieces.