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Memory/Storage??

SRAM delivers 8ns access times

Posted: 10 Feb 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Integrated Silicon Solution? ISSI? Asynchronous SRAM? SRAM? IS61WV20488A?

Integrated Silicon Solution Inc. (ISSI) introduced a 2M x 8, 16Mb, high speed Asynchronous SRAM with access times as fast as 8ns, giving designers a high speed device that utilizes low power technology to minimize power consumption.

The new IS61WV20488 is the first in a broad range of 16Mb SRAMs that ISSI is developing. This product is targeted for networking, telecom and automotive applications requiring high density, high speed, zero latency and fully random access memory.

"The IS61WV20488 provides the designer a high density solution for x8 applications and easy implementation for wider bus applications requiring 2Meg deep memories," said Sanjiv Asthana, VP of sales and marketing at ISSI. "And because power consumption is only 95mA max when operating at 10ns, the designer should be able to stay within the power budget."

The IS61WV20488A operates from 1.65V to 2.2V, while the IS61WV20488B operates from 2.4V to 3.6V. Rated for operation between the 0 to 70C temperature range, both devices are available in 44-pin TSOP II and 48 pin BGA packages. In quantities of 10,000, the IS61WV20488A/B are priced at $10. Samples are already available, with volume production scheduled in Q2 2006.




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