Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Manufacturing/Packaging

EUVL achieves 'cleaning milestone'

Posted: 20 Feb 2006 ?? ?Print Version ?Bookmark and Share

Keywords:EUVL? extreme ultraviolet lithography? wafer cleaning? Sematech North?

Sematech North researchers working on extreme ultraviolet lithography (EUVL) claims to have achieved an important breakthrough in the complex process of cleaning mask blanks, the base material for the stencil-like photomasks that are used to describe patterns on semiconductor wafers.

Engineers using a proprietary cleaning regimen on quartz substrates were able to remove all particles as small as 43nm, a dimension so small that 18 billion such particles could fit on the head of a pin. For EUV masks to be used in microchip production, none can have a substrate defect larger than 40nm for pilot lines and 25nm for volume manufacturing.

An advanced form of lithography, EUVL uses extremely short wavelength (13.5nm) light and reflective photomasks to image circuit patterns onto the surface of semiconductor wafers. The microchips that will be produced with EUV technology will contain features 32nm wide or smaller, and are projected to be as much as 100 times faster, with 1,000 times the memory capacity of today's most powerful computer chips.

David Krick, program manager of Sematech North's Mask Blank Development Center, explained that the significance of the cleaning milestone lies in the intricate and demanding science of producing usable masks for EUV manufacturing.

First, the basic mask material, called a substrate, must be made almost perfectly free of non-removable defects, such as pits or scratches. Second, the mask substrate must be cleaned of removable defects, such as airborne particles, down to 25nm. This cleaning process paves the way to the final step of depositing a multi-layered reflective coating on the substrate, allowing the resulting photomask to effectively reflect EUV energy.

"Cleaning of defects is a critical and necessary step in generating a zero-defect mask blank, because defects in the substrate become defects in the multilayer, which ruins the mask blank," Krick noted. A related challenge involves working with suppliers to produce mask substrates with no non-removable defects larger than 25nm, he added.

Krick said the cleaning project was challenged by the limitations of metrology, since even the most powerful commercial mask inspection microscopes cannot reliably detect particles smaller than 50nm. The Sematech team, using an upgraded confocal microscope from Lasertec, compensated with a repetitive cleaning and overlay methodology that effectively "enlarged" the sub-50nm particles so that they could be detected.

"A great deal of work still remains for getting EUV mask blanks ready for manufacturing, but our cleaning methodology has removed another barrier," Krick said. "We are well positioned for the tasks ahead."

Article Comments - EUVL achieves 'cleaning milestone'
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top