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Elpida's 512Mbit XDR DRAM devices operate at 4GHz data rate

Posted: 27 Mar 2006 ?? ?Print Version ?Bookmark and Share

Keywords:EDX5116ACSE? Elpida? memory? 512Mbit? XDR?

Elpida Memory Inc. announced the availability of 512Mbit XDR DRAM devices in sample quantities. The new devices operate at 4GHz data rate, providing a data transfer rate of 8GBps within a single device for digital consumer electronics applications such as high definition televisions, gaming consoles and home entertainment server systems that require high bandwidth to support three-dimensional graphics, superb digital imaging and advanced multimedia. XDR DRAM is based on the XDR memory interface architecture developed by Rambus Inc.

"The XDR architecture offers specific advantages for digital consumer applications, including extraordinarily high bandwidth per pin," said Yoshitaka Kinoshita, executive officer for the digital consumer division of Elpida. "Digital consumer applications represent the fastest growing segment of the market for Elpida Memory, and now that we are producing these devices on our 90 nm process, we expect to produce higher yield in response to the great demand."

Elpida's 512Mb XDR DRAM (part number: EDX5116ACSE) devices are organized as 4M words x 16bits x 8 banks. They are manufactured using the company's 90nm process technology and are available in 104-ball FBGA packages.

To support both high speed and robust data transfer, the devices utilize advanced Rambus-specific features such as Differential Rambus Signal Level interface, which minimizes the signal swing and noise, and octal data rate, which transfers 8 bits per clock cycle to achieve 4GHz operation even with the commonly used 400MHz clock. The XDR devices also feature programmable on-chip termination, adaptive impedance matching, dynamic request scheduling and zero overhead refresh.

Elpida's 512Mbit XDR DRAM devices are currently sampling to customers. Volume production is expected to begin based on market demand.




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