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Chipworks posts results of Samsung CIS module analysis

Posted: 31 Mar 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Chipworks? Samsung? S5K3BAF? CMOS image sensor? CIS module?

Chipworks announced their analysis of Samsung's new S5K3BAF 2Mpixel CMOS image sensor (CIS) module. The device is the first CIS Chipworks has identified using a 130nm copper process. According to the company, the De-Metallized Zone (DMZ) structure in the pixel array has eliminated the reflective liner layers, boosting the optical efficiency.

"Samsung's clever integration scheme effectively decouples the pixel array dielectric from the general dielectric stack. It has enabled the use of more levels of metal in the peripheral circuitry, and thus promises greater levels of transistor integration and system performance," said Gary Tomkins, manager of technical intelligence at Chipworks, in a statement. "In addition, the 130nm Cu process allows the use of MIM capacitors and a reduced overall thickness of the active pixel sensor (APS) structure, thus improving optical performance in a reduced pixel area."

Dick James, senior technology advisor at Chipworks, commented, "While Samsung's innovative migration to a more advanced process generation may lead to more design wins for this industry leader, it will be interesting to observe if the apparent reduction in cost and higher levels of functionality will induce competitors such as Toshiba, Micron, TSMC and UMC to move their CIS fabrication to their Cu lines."




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