Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

Samsung goes to volume with next 1Gbit OneNAND

Posted: 06 Apr 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Sean Shim? Samsung Electronics? OneNAND? flash memory? 70nm?

Samsung Electronics Co. Ltd announced early this week it has started mass production of a 1Gbit OneNAND flash memory made using 70nm manufacturing processes. The development comes less than 18 months after Samsung announced a 1Gbit OneNAND flash device made using 90nm manufacturing.

The OneNAND device is a form of application-specific memory that was originally aimed at unified storage on-board mobile phone handsets. It combines the high-speed data read function of NOR flash memory with the data storage density of NAND flash. The single chip is based on NAND architecture with integrated buffer memory and logic interfaces.

The new OneNAND memory targets applications beyond mobile handsets, which includes memory cards for digital cameras and use in hybrid hard disk drives, Samsung said in a report. The OneNAND memory has a sustained read speed of 108-Mbytes per second, compared with 68MBps of the previous 90nm OneNAND device. Its sustained write speed is same with the 90nm device's 9.3MBps.

The 70nm memory is now designed into well over 100 mobile products, with demand coming from digital cameras, set-top boxes and digital TVs, Samsung said. Samsung predicted OneNAND sales would reach $1 billion in 2008 and over $1.5 billion by 2010.

- Sean Shim
EE Times

Article Comments - Samsung goes to volume with next 1Gb...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top