Anadigics expands IP portfolio

Anadigics Inc. announced five new patents covering innovations in the design and development of RF chips. According to the press release, these new patents strengthen the company's intellectual property portfolio (IP) and extend its technological advantages across its wireless and broadband product families.

Patent 6,937,102 describes a new method for low bias current/temperature compensation current mirror in linear power amplifiers. Patent 6,970,039 was granted for efficiency enhancements for power amplifiers through the use of "uniquely designed" biasing circuits and combined heterojunction bipolar transistor (HBT) and FET processes.

Patent 6,998,920 covers the monolithically fabricated HBT amplification stage with a current-limiting FET. Patent 7,009,454 discloses a new method for optimizing an amplifier with an adjustable output range. Lastly, patent 7,015,519 was granted for fabricated GaAs bipolar and FET structures on the same die. This patent is being used in Anadigics' InGaP-Plus technology, allowing for higher levels of integration and performance.