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PA suits WLAN terminals

Posted: 15 May 2006 ?? ?Print Version ?Bookmark and Share

Keywords:HA31010? power amplifier? monolithic microwave IC? MMIC? Renesas?

Renesas Technology Corp. announced the HA31010 2.4 GHz/5GHz dual-band SiGe monolithic microwave IC as a power amplifier for WLAN terminal transmission power amplification.

Features of the HA31010 include: 2.4GHz/5GHz dual-band operation; 28dB power gain and 130mA current dissipation for 2.4GHz band use, and 24dB power gain and 160mA current dissipation for 5GHz band use; on-chip switching circuit with integrated MOSFET; and an on-chip output power detector circuit.

According to Renesas, the product uses a SiGe-CMOS process, and performs a transistor pattern and circuit block layout optimization, reducing parasitic capacitance and parasitic inductance. This has made it possible to achieve 28dB power gain, 79mW (19dBm) output power with error vector magnitude (EVM) at 4 percent, and current dissipation of 130mA (with a 3.3V power supply voltage) at 2.4GHz. At 5.2GHz, the product achieves 24dB power gain, 63mW (18dBm) output power with EVM at 4 percent, and current dissipation of 160mA (with a 3.3V power supply voltage).

The product is said to suit applications such as WLAN terminals.

The HA31010 is housed in a surface-mount, 24-pin package that measures 4-by-4-by-0.8mm. Pricing is at $2.83, and samples will begin shipping in Japan this June 2006.

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