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GaN HEMT targets wireless, WiMAX apps

Posted: 15 Jun 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Cree? 15W? gallium nitride? GaN? high-electron mobility transistor?

Cree Inc. has announced sample availability of its new 15W packaged gallium nitride (GaN) high-electron mobility transistor (WiMAX bands" target=_blank>HEMT)--the CGH35015--which is optimized for broadband wireless access and for WiMAX applications operating between 3.3GHz and 3.9GHz.

GaN HEMTs offer higher linear power and enhanced efficiency performance over wider bandwidths than traditional technologies such as silicon LDMOS or GaAs, the company said. The CGH35015 typically produces 2.5W average output power and 20 percent drain efficiency over the frequency range of 3.3- to 3.9GHz. It features 11dB of small signal gain and 2 percent error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28V.

"The CGH35015 is the first in a series of packaged GaN products Cree plans to introduce this year for the broadband wireless access and WiMAX/WiBro markets," said Jim Milligan, Crees manager for wide bandgap RF products. "GaN is well suited for applications that operate under high power conditions and that must meet high efficiency and stringent linearity requirements, like WiMAX and other applications that operate between 2- and 6GHz."

Additional information on the new device may be obtained by from the company website.




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