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GaN transistors target cellular, WiMAX bands

Posted: 16 Jun 2006 ?? ?Print Version ?Bookmark and Share

Keywords:RFMD? gallium nitride? GaN? high electron mobility transistor? HEMT?

RF Micro Devices (RFMD) has introduced a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors and announced it is sampling to top-tier cellular infrastructure and WiMAX base station customers. The company said the sampling of these transistors represents the achievement of its baseline 0.5&956;m GaN high-power transistor process.

According to RFMD, these high power devices show excellent peak drain efficiency up to 67 percent at UMTS and up to 60 percent at WiMAX frequency bands. The company said the devices achieved high gain of 16dB, high power density of up to 4W/mm at 28V and 1,000hr high temperature reliability results.

"For cellular infrastructure and WiMAX base station OEMs dependant on maximizing power and efficiency, RFMD's GaN transistors provide higher at-package matching impedance, higher power density and wider bandwidth performance when compared with silicon LDMOS devices," said Bill Pratt, Co-founder, Chief Technical Officer and Corporate Vice President for RFMD.

Devices targeted for the wireless cellular market's UMTS or 3G base station segment include the RF3820 (8W), RF3912 (60W), RF3913 (90W) and RF3914 (120W). Devices targeted at the emerging WiMAX base station segment include the 2.5 GHz RF3916 (50W), RF3917 (75W), RF3918 (100W) and 3.5 GHz RF3821 (8W), RF3919 (50W).

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