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RF/Microwave??

LNAs for cellular, WiMAX start sampling

Posted: 19 Jun 2006 ?? ?Print Version ?Bookmark and Share

Keywords:RFMD? low noise amplifiers? LNA? gallium arsenide? GaAs?

RFMD announced it has started pre-production sampling of five new gallium arsenide (GaAS) GSM Antenna Switch" target=_blank>pHEMT low noise amplifiers (LNAs) for GSM, CDMA, UMTS, EDGE and WiMAX air interface standards.

"Through our collaboration with leading infrastructure OEMs, we have developed a family of LNAs that combine the bandwidth and performance necessary for highly linear WCDMA UMTS and OFDM WiMAX modulation standards," said Jeff Shealy, VP for Infrastructure Product Group at RFMD. "With minimal external matching, our customers can optimize these parts for a variety of wireless infrastructure applications, including CDMA, PCS, DCS, UMTS, WLAN and WiMAX."

The five new GaAs pHEMT LNAs offered are part of the RF386x product familyRF3861, RF3863, RF3865, RF3866 and RF3867. Offering customers a broadband frequency range of 380-3800MHz with low noise figure (0.7dB) and a variety of LNA configurations (single-stage, dual-stage and dual-channel), these amplifiers provide flexible supply voltages (2.5-6V), high gain (up to 30dB), very high output IP3 (up to 38dBm) and excellent input and output return loss, RFMD said.

These LNA products are packaged in a low-cost, 5-by-5mm plastic QFN package and are currently sampling to key cellular infrastructure and WiMAX base station OEM customers. Production release is targeted in September 2006.




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