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New tech eases metal/high-k gate fabrication

Posted: 23 Jun 2006 ?? ?Print Version ?Bookmark and Share

Keywords:NEC? metal/high-k gate stack? transistor?

NEC Corp. has announced the joint development of a new technology for realizing low-power and high-performance SoC devices of 65nm, 45nm nodes and beyond. The new technology simplifies the method of manufacturing highly reliable metal/high-k gate transistors, said the company.

There have been several issues in the fabrication of metal/high-k gate stacks including the maintenance of stable current output after prolonged operation, which has not been realized due to increased current leakage from the ultra-thin gate stack.

The newly developed technology promises to solve this major issue, in addition to lowering production costs, through the simplicity of the process and high uniformity in transistor performance. This is a large step toward the realization of low-power-consuming devices with a metal/high-k gate stack, prolonging the battery life of mobile equipment, the company explained.




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