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GaN RF power transistor delivers 400W

Posted: 12 Jul 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Cree? GaN RF power transistor?

Cree Inc. announced it has demonstrated a new high-power gallium nitride (GaN) RF power transistor for use in mobile WiMAX applications. The discrete transistor produces a record 400W of peak pulsed RF power at 3.3GHz with 10.6dB of associated power gain and 62 percent drain efficiency when operated at 40V.

"We are pleased to announce that we have achieved this 400W milestone. To our knowledge, this is the highest output power publicly reported for a single packaged GaN transistor in this frequency range," said Jim Milligan, Cree's product manager for wide bandgap radio frequency products. "Upcoming mobile WiMAX applications are expected to require average orthogonal frequency-division multiplexing (OFDM) output power between 10- and 25W with peak-to-average ratios (PAR) as high as 12dB. This will require transistors that are capable of delivering up to 400 watts of peak RF output power."

Initial transistor sampling is targeted for later this year.

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