Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

Intel, Micron start sampling 50nm NAND flash

Posted: 27 Jul 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Intel? Micron? flash memory? NAND? XX?

Intel and Micron, collaborators in flash memory, are sampling a 4Gbit NAND flash memory fabricated in a 50nm process technology, disclosed Micron Technology Inc. The devices were manufactured by IM Flash Technologies LLC, a joint venture formed by Intel and Micron.

Only a few days earlier the companies' main rival in flash memory, Samsung Electronics Co. Ltd, announced that it had begun mass producing an 8Gbit NAND flash-memory device made using 60nm technology.

Micron said that although it and Intel are sampling 4Gbit devices now, the companies plan to mass produce a range of memory capacities on the 50nm node in 2007.

According to industry research forecasts, the NAND market segment is estimated to reach $13 to $16 billion in 2006 and grow to approximately $25 to $30 billion by 2010.

"Micron entered the NAND business in 2004 using a 90nm process. In a few short years and through our collaboration with Intel, we are now poised to introduce a leadership product based on a cutting-edge process technology," said Brian Shirley, Micron vice president of memory, in a statement.

- Peter Clarke
EE Times

Article Comments - Intel, Micron start sampling 50nm NA...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top