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Mitsubishi announces sale of GaAs HEMT in Ka band

Posted: 08 Aug 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Mitsubishi? Ka band? high electron mobility transistor? XX? XX?

Mitsubishi Electric Corp. has developed a high gain version of a micro-X package high electron mobility transistor (HEMT), designed for low noise amplifiers in 18-20GHz-band satellite broadcasting reception systems and very small aperture terminal (VSAT) systems.

According to the company, the transistors will mainly be used in the Ka band Direct Broadcast Satellite and VSAT markets for low noise amplifiers in reception converters. The recent launch of the 20GHz (down link)/30GHz (up link) systems is expected to increase demand for HEMT, due to the expansion of transmission capacity in current satellite communication systems with the development of high-speed data link and Digital/High Definition broadcasts.

Mitsubishi shared that they developed the new HEMT in response to the market demand for low price and high gain/low noise characteristic in high frequencies for the Ka band systems. This product will improve the cost performance of satellite communication equipment, the company added.

Shipments of the HEMT transistors will begin in October.




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