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Samsung starts 1Gbit DDR2 DRAM mass production

Posted: 05 Sep 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Samsung Electronics? 1Gbit DDR2 DRAM? DDR2 DRAM? 90nm? 80nm?

Samsung Electronics Co. Ltd announced the mass production of 1Gbit DDR2 DRAM memory using 80nm process technology. While monolithic 1Gbit DDR2 is currently available, it is produced with more costly and less efficient 90nm technology.

By applying 80nm process technology, Samsung will produce what's touted as the world's smallest DRAM package (11-by-11.5mm). This is 36 percent smaller than the 11-by-18mm package required for a DRAM chip utilizing 90nm and nearly as small as the 512Mbit DRAM, which is half the size of a 90nm 1Gbit chip.

Most 1Gbit DRAM chips today are stacked in high-capacity DRAM modules for next-generation servers. These modules include the 4GByte fully buffered dual in-line memory module and the 2Gbyte small outline dual inline memory module.

Thirty-six 1Gbit DRAM chips are needed to create a 4Gbyte module, which has had to be configured either by stacking two chips on top of one another or by enclosing two chips into the same package. Avoiding chip stacking simplifies the production process, lowers production costs and enhances overall electrical properties.

Market research firm Gartner estimated that the global DRAM market is worth $28.7 billion this year and predicted that will rise to $37.8 billion by 2008. The 1Gbit DRAM currently represents 8 percent of total market share, but is expected make up 36 percent of all DRAM sold in 2008.

Samsung is now producing all densities of DDR2 DRAM at the 80nm node. It began producing the first 512Mbit DDR2 DRAM at 80nm node since last March.

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