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Korean foundry develops 130nm CMOS image sensors

Posted: 07 Sep 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Dongbu Electronics? fab? CMOS image sensor? image sensor? 130nm?

Dongbu Electronics announced early this week that it has completed development of an advanced CMOS image sensor (CIS) process at the 130nm node together with Electronics & Telecom Co. Ltd. The South Korean pure-play semiconductor foundry said the new wafer process enables the manufacture of CIS devices that specify a 1.3Mpixel resolution and a1.5V operating voltage. CIS devices manufactured at 130nm process also promise enhanced resolution, gray scale and relative illumination, Dongbu added.

"We recognized early the huge market potential for CIS devices and how little technological development was taking place to improve CIS processing and imaging," said Jae Song, Dongbu's executive vice president of strategic business development, in a statement. "Since establishing our CIS development team about four years ago, we have acquired 20 CIS patents at home and abroad and made CIS one of the specialty solutions that we deliver."

Dongbu said it expects to begin volume production of the new CMOS image sensor chips using the new process in Q4.

- EE Times

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