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Microsemi improves power FET specs with new process

Posted: 14 Sep 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Microsemi? MOS 8? MOSFET? FREDFET? IGBT?

MOS 8 device

Microsemi Corp. announced on Sept. 12 a slew of MOSFET and Fast-Reverse Epitaxial Diode FET (FREDFET) devices that use its proprietary MOS 8 process to achieve higher performance at lower manufacturing costs.

Microsemi, which acquired Advanced Power Technology Inc. and its RF and power switching technology late last year, said the 15 new devices are designed for high power, high performance switch mode applications, including power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, semiconductor capital equipment and induction heating.

New process
The MOS 8 technology utilizes a simplified manufacturing process that significantly lowers costs compared to the company's previous power MOSFET products. For instance, the 1,000-unit pricing for APT56M50B2 is $7.34.

Microsemi engineers have also employed advanced design techniques to optimize capacitances and gate resistance. Speaking about the benefits of the MOS 8 process, Tom Loder, VP sales and marketing, Microsemi Power Products Group, explained, "The optimized values for input and reverse transfer (Miller) capacitances limits the peak slew rates in voltage and current during switching and results in reduced EMI and high dv/dt ruggedness capability.

"gate charge is a combination of various capacitances. High gate charge makes switching slower. Reducing gate charge increases frequency and efficiency,... it means low gate drive power, which in turn means you don't need a high power circuit to turn them ON or OFF," said Loder.

"Our new POWER MOS 8 family utilizes advanced technologies and manufacturing processes to deliver what our customers have asked for in our new generation of MOSFETs and FREDFETs," stated Russell Crecraft, VP and GM Power Products Group, in a press release. Loder added, "Some of our customers had trouble with very high switching frequenciesthey had difficulty controlling the frequency. MOS 8 allows better control to prevent oscillation in circuits."

The manufacturing processes have also lowered their thermal resistance and enabled higher current ratings for each die size and package type compared to earlier devices, according to the company.

All MOS 8 devices are 100 per cent tested for avalanche energy capability and are offered only in RoHS compliant packages.

The first to be released in the POWER MOS 8 family are ten MOSFET and five FREDFET devices with power ratings ranging from 19A to 75A and voltage specs from 500V to 1.2kV. "The complete family of MOS 8 MOSFETs and FREDFETs will be introduced by the end of Q1 in 2007," said Loder.

Microsemi FET family
Table 1: The first MOS 8 devices from Microsemi.

MOS 8 FREDFETs have all of the features and advantages of MOS 8 MOSFETs, with the added benefit of a faster body diode recovery speed of But these advantages require a trade-off: slightly higher RDS(ON) for 800V ratings and slightly higher leakage current. "The ZVS are particularly well suited to the 10kV range applications," added Loder.

The first Ultrafast Recovery FREDFETs, rated at 500 and 600 volts, will feature a 150ns recovery time and are scheduled for release in Q4 2006.

MOS 8 IGBTs with 600V and 900V, and 10A to 100A ratings will follow in early 2007. "These devices are suitable for switch-mode power supplies in the 150kHz range," said Loder. He expects some customers to replace MOSFETs in these applications. A combination of IGBT and MOSFET in the same package from Microsemi will obviate the need for an anti parallel diode.

- By Vivek Nanda
EE Times Asia

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