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Fujitsu licenses MoSys IT-SRAM tech for 65nm process

Posted: 22 Sep 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Fujitsu? MoSys? IT-SRAM? SRAM? memory IC?

MoSys Inc. and Fujitsu Ltd announced an agreement under which MoSys' IT-SRAM technology is licensed to Fujitsu on its advanced 65nm production process.

The companies' partnership already covers the 0.13?m and 90nm semiconductor technologies. With the implementation of MoSys-patented 1T-SRAM memory technology and IT-Q bit cell to Fujitsu's 65nm process, Fujitsu is able to offer complex SoCs, that have a fraction of the die area devoted to embedded memory compared to other competing embedded memory technologies, while maintaining very high performance with extremely low power consumption.

"Since partnering with MoSys, Fujitsu has acquired much experience in the design and manufacturing methodologies of 1T-SRAM-Q technology," said Kimiaki Satoh, general manager of the FCRAM division, electronic devices group of Fujitsu. "Fujitsu already has its own advanced 65nm technology. By having 1T-SRAM-Q based memory macros available on our cutting-edge technology, we can empower our customers by enabling them to meet some of the most demanding challenges of future silicon products - achieving cost competitiveness while maintaining higher performance. We accomplish these goals without sacrificing memory density and speed."

"By adopting MoSys 1T-SRAM technology for its 65nm products, Fujitsu can use the extensive experience developed on the 0.13? and 90nm processes to provide optimized solutions for its customer base and provides momentum for scaling below 65nm in the future," said Chet Silvestri, CEO at MoSys.

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