Renesas SiGe MMIC touts 'lowest' dissipation

RF IC maker Renesas Technology America Inc. announces sampling of its HA31010, a dual-band 2.4GHz and 5GHz SiGe MMIC power amplifier (PA).

This PA draws less current and uses minimal circuit board space, enabling smaller, lower-power dual-band/triple-mode IEEE-802.11a/b/g and MIMO WLAN terminals.

By incorporating two power amplifiers on a single chip (one for the 2.4GHz band and the other for the 5GHz band), the HA31010 MMIC consumes only a 4-by-4mm footprint, which is approximately 40 percent smaller than separate 2.4GHz and 5GHz Renesas SiGe MMICs.

The 3.3V HA31010 device also delivers high gain at what Renesas claims is the industry's lowest dissipation level for a SiGe MMIC. The device provides 28dB of power gain in the 2.4GHz band while drawing only 130mA.

It provides 24dB power gain in the 5GHz band while drawing 160mA. Typical output power at 2.4GHz is 19dBm (80mW). Output at 5GHz is 18dBm (64mW).

An on-chip MOSFET-based switching circuit provides on/off control of the two amplifier circuits, simplifying band switching and T/R implementation by eliminating the need for an external switching device.

The HA31010 MMIC also incorporates an output power detector circuit. This feature simplifies the design of WLAN terminals that actively implement low power. In those designs, the power detector serves as a sensor for the automatic output-power control function that maintains the minimum output power necessary for communication.

Inside the package, Renesas uses an ultrafine SiGe-CMOS process. The IC's transistor pattern and circuit-block layout are also optimized to reduce parasitic capacitances and inductances that would otherwise degrade its characteristics.

The chip is mounted in a small surface-mount, 24-pin package that is totally Pb-free. The package employs silver paste material for optimal die bonding reliability and conductivity, and Sn-Bi for package electrode plating.

Sample price is $2.57.

- Alex Mendelsohn
eeProductCenter