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VeriSilicon, MoSys partner to expand 1T-SRAM adoption

Posted: 20 Nov 2006 ?? ?Print Version ?Bookmark and Share

Keywords:VeriSilicon? MoSys? 90nm? ASIC? 1T-SRAM?

VeriSilicon Holdings Co. Ltd and MoSys Inc. are collaborating to further increase the adoption of MoSys' proprietary 1T-SRAM technology by providing seamless access to the patented technology.

"We are very happy to work with VeriSilicon to proliferate our technology to a wider range of customers," said Chet Silvestri, CEO of MoSys. "Over the last few years, VeriSilicon has garnered numerous industry awards by amassing a successful track record across an impressive worldwide customer base. Our expectation is that the combination of our pioneering memory technology and VeriSilicon leading ASIC capabilities will result in uniquely optimal silicon solutions for numerous types of applications."

Fabless ASIC design foundry VeriSilicon will add the 1T-SRAM capability to its intellectual property portfolio offering, for use into customer SoC designs, on multiple foundries.

"Our collaboration with MoSys represents VeriSilicon's commitment to provide customers a one-stop-shop for their IP and turnkey needs," said Federico Arcelli, corporate VP of worldwide sales and marketing at VeriSilicon. "By working with a technology leader like MoSys, our customers can also leverage our other IP products and design services to develop ultra-competitive solutions in terms of silicon area and power to meet their most demanding product requirements."

Under the partnership, customers can work directly with VeriSilicon to integrate MoSys' memory technology into their designs across a slew of foundry options and advanced process geometries, such as 90nm.




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