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Fujitsu intros 256Mbit FCRAM for mobile apps

Posted: 06 Dec 2006 ?? ?Print Version ?Bookmark and Share

Keywords:Fujitsu? FCRAM? PSRAM? SRAM? memory devices?

Fujitsu's new 256Mbit FCRAM chip

Fujitsu Microelectronics America Inc. (FMA) has announced a new 256Mbit Mobile Fast Cycle RAM (FCRAM), a Pseudo Static RAM (PSRAM) with an SRAM interface based on Fujitsu's proprietary FCRAM core technology. The high-speed operation and low power consumption of the new MB82DDS08314A make a suitable design choice for mobile applications such as cellular handsets.

The new FCRAM uses double data rate (DDR) burst mode operation and is fully compliant with the common specifications for Mobile RAM (COSMORAM) Revision 4. The new FCRAM also features a multiplexed address/data interface, high-speed data transfer reaching 1GBps, and rapid initial access time, which is enabled by a very short latency mode.

The MB82DDS08314A minimizes device pin counts by multiplexing address and data buses. Smaller pin counts eliminate the need for complicated board designs.

"High-end mobile phones require feature-rich functions such as digital still cameras, video cameras and digital terrestrial broadcasting streaming. With the growing popularity of high-performance smart phones, high-density, high-speed FCRAMs are essential," said Tong Swan Pang, product marketing manager of FMA. "The Fujitsu FCRAM family provides very high-speed data rates to enhance the mobile phone feature on the existing PSRAM-based platform."

Power-saving modes
The new 256Mbit FCRAM offers various power-down modes from full-sleep mode to partial shutdown to efficiently manage power conservation depending on the needs of the user. This prolongs battery life for mobile phones.

In addition to the new DDR burst Mobile FCRAM, Fujitsu is also introducing the MB82DBS08314A, which is compliant with the conventional COSMORAM Rev.3. This FCRAM provides a suitable solution for customers who need large RAM density with an existing SDR PSRAM interface.

Engineering samples will be available January 2007, and volume production will begin April 2007. Both devices are available in packages, as well as in chip and wafer form.




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