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Hynix unveils 512Mbit mobile DRAM chip

Posted: 11 Dec 2006 ?? ?Print Version ?Bookmark and Share

Keywords:DRAM? NAND flash? Hynix? DDR SDRAM? 3G?

Hynix Semiconductor Inc. has developed a 512Mbit mobile DRAM that meets industry chip standards and operates at 200MHz.

Using 32bit-wide I/Os, the mobile DDR SDRAM processes 1.6Gbytes of data per second, which Hynix claims is about 1.5 times faster than the speed of the company's existing mobile DRAM products. "The new product will deliver the memory capacity and speed required for 3G mobile phones that provide new services, such as [digital multimedia broadcasting] to subscribers," Hynix said in a statement.

Hynix also said the 8-by-10mm DRAM is expected to compete for design wins in mobile applications, which are driving the miniaturization in the chip package size.

Hynix said it expects to combine the 512Mbit mobile DRAM and NAND flash memory in a multichip package, enabling the design of slimmer mobile phones.

"We are almost at a final stage of receiving the world's first validation from a major mobile chip set company," Hynix said without elaborating.

- Sean Shim
EE Times




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