Power MOSFETs suit HID lamp electronic ballast

STMicroelectronics has introduced the first member of a new power MOSFET family that allows customers to reduce conduction losses and increase efficiency and reliability of their lighting applications by achieving very low ON-resistance characteristics.

The STD11NM60N, benefiting from the second generation of ST's proprietary MDmesh technology, provides a maximum R_ds(on) of 450 milliohms. The device's resistance value is reduced by up to 55 percent compared to the previous MDmesh technology, without sacrificing tight control of its temperature dependence.

This 600V device features an energy-optimized driver circuit which enables the MOSFET to drive higher currents at a lower Voltage Gate Threshold (VGS(th)). In fact, keeping the same threshold spread (2V), the range of VGS used to drive the device has been lowered, thus optimizing the drive and ensuring high noise immunity that prevents the circuit from switching on unintentionally.

The STD11NM60N features an excellent diode dV/dt capability as well as good avalanche performance allowing customers to keep operating temperatures within the typical working range. As a result of the very low conduction losses and reduced power dissipation, the device also helps customers cut heat-sink dimensions saving significant space board.

The small size of the chip, housed in very tiny DPAK/IPAK and TO-220FP packages, make it particularly suited to lighting applications such as high power factor electronic ballasts and high intensity discharge (HID) lamp electronic ballasts.

The STD11NM60N is available in volume today. Pricing is 90 cents in quantities of 10,000 pieces.