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ASML bags 45nm litho deal at IBM, AMD

Posted: 14 Dec 2006 ?? ?Print Version ?Bookmark and Share

Keywords:lithography? lithography immersion? 45nm? microprocessor? 193nm?

IBM Corp. and Advanced Micro Devices Inc. (AMD) presented papers describing the use of immersion lithography, ultra-low-k dielectrics, and multiple enhanced transistor strain techniques for 45nm microprocessor designs at the International Electron Devices Meeting.

Both companies expect the first 45nm products using immersion lithography and ultra-low-k interconnect dielectrics to be available in mid-2008. AMD tipped the details last week, when it rolled out its 65nm microprocessors.

As expected, the two companies plan to use 193nm immersion scanners from ASML Holding NV. IBM, AMD and others have been exploring the use of 193nm immersion tools from ASML at Albany Nanotech, a U.S.-based R&D entity. ASML has also won 193nm immersion deals at Inotera, IM Flash, Nanya, Samsung, TSMC, among others.

The two companies will use IBM's low-k film at 45nm, said John Pellerin, director of logic technology development at AMD. The film, dubbed SiCOH, has a k value of 2.7.

''AMD is not using any of [Applied Materials Inc.'s] standard films, but rather unique processes to our alliance for 90-, 65- and 45nm,'' he said. ''Our films parallel the offerings from [Applied Materials] in k value, but with better mechanical properties. Our films do run on the AMAT tooling.''

IBM and AMD have been collaborating on the development of next-generation semiconductor manufacturing technologies since January 2003. In November 2005, the two companies announced an extension of their joint development until 2011 covering 32nm and 22nm process technology generations.

The two companies have a different strategy than Intel Corp. As reported, Intel revealed that it would not use immersion lithography to characterize its chips at the 45nm node.

Instead, Intel plans to extend its existing and conventional 193nm wavelength ''dry'' scanners for use in processing the critical layers at the 45nm node. Intel is expected to use 193nm immersion tools at 32nm.

- Mark LaPedus
EE Times




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