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AMIS unveils new smart-power device tech

Posted: 22 Dec 2006 ?? ?Print Version ?Bookmark and Share

Keywords:power management? smart-power? AMIS? XtreMOS?

AMI Semiconductor (AMIS) reported that XtreMOS, the company's new smart-power device technology, is breaking the silicon limit and is outperforming competition by a factor of 2-3 for voltages in the range of 100V and achieving an on-state resistance as low as 33 milliohm.mm?.

The device consists of vertically stacking a MOS and a high-voltage resistor, making use of trench-based vertical RESURF physics to achieve a record on-state resistance with a high breakdown voltage and high Safe Operating Area (SOA). This technology is built for power-efficient, high-voltage applications such as line drivers and motor controllers.

"XtreMOS is a breakthrough innovation in smart power technology, enabling the integration of very efficient high power drivers into truly SoC smart power products, at a low cost," said Jon Stoner, AMIS CTO. Initially this technology will be implemented in the company's 0.35?m I3T Smart Power Technology Platform, though it can easily be ported to other technology nodes. The XtreMOS technology will allow AMIS to further grow into markets for integrated power applications, such as motor drivers and communications line drivers.




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