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Samsung touts industry's 'first' 1Gbit mobile DRAM

Posted: 02 Jan 2007 ?? ?Print Version ?Bookmark and Share

Keywords:Samsung? DRAM? mobile DRAM? SDRAM? DDR?

Samsung Electronics Co. Ltd announced that it has developed the industry's 'first' 1Gbit Mobile DRAM using 80nm process technology. Compared to the double-die stack, 1Gbit memory solution used in today's mobile applications, the monolithic 1Gbit Mobile DRAM features a 30 percent drop in electric current and is more cost-effective than similar solutions, said the company.

Also known as low-power DDR or SDRAM, the 1Gbit Mobile DRAM chip uses the same packaging technique as the 512Mbit double-die stack 1Gbit package. However, the new chip introduces a new temperature-sensing feature that maximizes the self-refresh cycle to reduce power drain in standby mode.

Also offering a more compact form factor, the 1Gbit Mobile DRAM chip is at least 20 percent thinner than a multistack package of 512Mbit dies. Thus, the chip enables a single high-density package solution of 1.5Gbit or even 2Gbit Mobile DRAM. A 1Gbit mobile DRAM also can be combined with flash memory in multichip packaging including package-on-package designs.

Production of the new device will begin in the second quarter, when market demand for memory solutions 1Gbit and beyond is expected to rise.




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