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Samsung makes 'first' 1Gbit mobile DRAM

Posted: 04 Jan 2007 ?? ?Print Version ?Bookmark and Share

Keywords:DRAM? mobile DRAM? DDR? synchronous DRAM? Samsung?

1Gbit mobile DRAM from Samsung

Samsung Electronics Co. Ltd has developed what it touts as the industry's first 1Gbit mobile DRAM for mobile products, using 80nm process technology.

This chip, also known as low-power DDR or synchronous DRAM, will be more cost effective than other high-density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products, said Samsung.

Competitive choice
The monolithic 1Gbit Mobile DRAM is a highly competitive choice for mobile applications over the double-die stack, 1Gbit memory solution widely used today, as the electric current in the new chip drops a full 30 percent.

This DRAM chip uses the same packaging technique as the 512Mbit double-die stack 1Gbit package, however, it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.

Single, high-density package
Also offering a more compact form factor, the 1Gbit Mobile DRAM chip is at least 20 percent thinner than a multistack package of 512Mbit dies, allowing a single high-density package solution of 1.5Gbit or even 2Gbit Mobile DRAM memory, for which market demand is expected to grow this year. The 1Gbit mobile DRAM also can be combined with flash memory in multichip packaging including package-on-package designs.

Samsung plans to mass produce the new device beginning Q2 2007 at a time when demand for high-density 1Gbit mobile DRAM is expected to be very high.

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