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Samsung samples out 50nm 16Gbit NAND flash

Posted: 05 Jan 2007 ?? ?Print Version ?Bookmark and Share

Keywords:flash memory? NAND? memory? Samsung? 50nm?

16Gbit NAND flash memory from Samsung

Samsung Electronics Co. Ltd announced it is sampling its 16Gbit NAND flash memory, touted as the first NAND flash using 50nm process technology.

The first samples of this high-density NAND flash memory have a multilevel cell (MLC) design with a 4Kbyte page size to enhance both its read and write features. The new 4Kbyte page function improves the conventional 2Kbyte paging system for MLC NAND flash to double the read speed, while increasing write performance 150 percent.

By nearly doubling the overall performance of its MLC NAND, Samsung said mobile consumers will enjoy faster data transfer speeds when storing or reading large data files whether they're using an external memory card, or a handset with a built-in flash solution such as Samsung's moviNAND.

Early market introduction of 16Gbit and higher density NAND flash memories is expected to accelerate the adoption of non-volatile memory applications such as flash-based solid state disks.

Samsung plans to begin mass producing its 16Gbit NAND flash memory this quarter.




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