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Sandisk to deliver 56nm gigabyte NAND flash chips

Posted: 25 Jan 2007 ?? ?Print Version ?Bookmark and Share

Keywords:flash memory? memory devices? memory chips? memory IC? NAND flash?

SanDisk Corp. will launch this quarter its 1Gbyte single-chip multilevel cell (MLC) NAND flash memory followed by a 2Gbyte version in the second quarter. Both solutions will be manufactured using the 56nm node. Product shipments will begin in the first half.

The 56nm flash will be initially produced at Fab 3, the first 300mm joint wafer facility of SanDisk and Toshiba Corp. located at Toshiba's Yokkaichi site in Japan. At present, the facility is undergoing transition from 70nm to 56nm flash memory chips.

"With the commencement of 56nm technology, SanDisk is rolling out its fifth-generation of MLC NAND flash memory," said Randhir Thakur, SanDisk's executive VP of technology and worldwide operations. "The technology and design advances will help enable SanDisk products to offer approximately twice the improvement in write performance compared to the 70nm generation."

By yearend, a new 300mm facility will boost the 56nm flash production. Construction of the new facility, Fab 4, is now ongoing, which is under the Flash Alliance Ltd, a joint venture of Sandisk and Toshiba.

Reflecting on its joint technology development with Toshiba, Thakur said, "We are pleased with the joint development of 56nm advanced technology with Toshiba, and expect it to become a production workhorse in Fab 3 during the second half of this year. We are executing according to plan and continue to make the captive fabs highly cost-effective sources of flash memory for our expanding array of consumer products."

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