MOSFETs suit ultralow gate drive operation

Zetex Semiconductors has introduced three new n-channel enhancement mode MOSFETs developed specifically for applications with limited drive voltage availability.

The 20V ZXMN2B03E6 (SOT236), ZXMN2B14FH and ZXMN2B01F (both SOT23) are capable of low loss switching at a V_GS of 1.8V, enabling them to be operated from two 1.2V cells or a single Li-ion. Their ultralow gate drive also means they can be driven directly by logic gates.

Rds(on) for the three MOSFETs is respectively claimed to be less than 75-, 100- and 200 milliohms at 1.8V_GS and 40-, 55- and 100 milliohms at 4.5V_GS. This makes them suitable for low-voltage roles including level shifting for high side disconnect switches, external switching for boost-converter circuits and buffering low-voltage MCUs and loads such as motors and solenoids.

Fast switching performance is another key feature of the company's proprietary UMOS technology.