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PAM, TSMC to develop Bipolar-CMOS-DMOS tech

Posted: 12 Feb 2007 ?? ?Print Version ?Bookmark and Share

Keywords:Bipolar-CMOS-DMOS? BCD? Power Analog? TSMC?

Power Analog Microelectronics (PAM) and Taiwan Semiconductor Manufacturing Company Ltd (TSMC) announced the joint development of Bipolar-CMOS-DMOS (BCD) technology based on a 0.25?m high-voltage process specifically tailored to high-performance power analog ICs used in audio and video displays and devices.

According to the press release, PAM is contributing its know-how in high-voltage and high-current IC designs with specialty devices requirements. TSMC in turn is making this specialty technology a mass production proven process as such PAM's advanced high performance IC designs will be manufactured in TSMC high yielding fabs.. With the addition of this 0.25?m high-voltage process, TSMC further expands its offerings in the BCD technology platform.

"PAM is pleased to establish the partnership with the global foundry leader TSMC to jointly develop advanced BCD technology. This will allow us to deliver the most advanced next generation products to satisfy customers' increasing demand for high-power devices for applications in flat panel displays, as well as consumer audio and video markets," stated Johnston Chen, president and CEO of PAM.

"Support for advanced BCD technology is an important part of our analog semiconductor manufacturing business," said Jason Chen, vice president of corporate development at TSMC. "Working with PAM allows us to partner with an innovator in power analog ICs with high-voltage design expertise."




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