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Freescale intros LDMOS RFIC for TD-SCDMA

Posted: 02 Mar 2007 ?? ?Print Version ?Bookmark and Share

Keywords:3G? TD-SCDMA? China? Freescale? LDMOS?

Freescale Semiconductor has introduced a high-power multistage RF power LDMOS FET characterized for Time Division-Synchronous Code Division Multiple Access (TD-SCDMA) wireless base stations.

Emerging standard
TD-SCDMA is a 3G wireless access method that's expected to be widely deployed in China. Freescale claims to be the first company to deliver commercial RFICs characterized for this emerging standard. The high output levels of the newly optimized Freescale MW6IC2240NB allow OEMs to reduce part count from two or three devices to one, saving board space and reducing power consumption and cost.

The MW6IC2240NB is an LDMOS two-stage RFIC. When employed in a final amplifier application at 28V, it is designed to deliver a gain of 28dB, ALT1 of -47dBc and ALT2 of -49dBc (6-carrier TD-SCDMA signal) from 2010MHz to 2025MHz at an output power of 35dBm. The device operates from 26V to 32V and features integrated quiescent current temperature compensation. It is housed in a TO-272 over-molded, cost-effective plastic package.

LDMOS, MOSFET power amps
In addition to the MW6IC2240NB, Freescale introduced six additional LDMOS and MOSFET power amplifiers suited for multicarrier applications such as CDMA, W-CDMA and TD-SCDMA. Operating at a frequency range of 2010 to 2170 MHz, the devices are:

  • MHV5IC2215N: A two-stage LDMOS driver amplifier with output power of 23dBm, gain of 27.5dB, ALT1 of -49dBc and ALT2 of -50dBc (6-carrier TD-SCDMA signal)

  • MRF6S21060N: An n-channel, enhancement-mode lateral power MOSFET with output power of 35dBm, gain of 15.5dB, ALT1 of -48dBc and ALT2 of -49dBc (6-carrier TD-SCDMA signal)

  • MRF6S21100N: An n-channel, enhancement-mode lateral power MOSFET with output power of 35dBm, gain of 14.5dB, ALT1 of -49dBc and ALT2 of -51dBc (6-carrier TD-SCDMA signal)

  • MRF6S21100H: An n-channel enhancement-mode lateral power MOSFET with output power of 35dBm, gain of 16dB, ALT1 of -51dBc and ALT2 of -53dBc (6-carrier TD-SCDMA signal)

  • MW6IC2015NB: A two-stage LDMOS driver amplifier with output power of 25dBm, gain of 27dB, ALT1 of -50dBc and ALT2 of -52dBc (6-carrier TD-SCDMA signal)

  • MRF7S19080H: An n-channel enhancement-mode lateral power MOSFET with output power of 35dBm, gain of 18db, ALT1 of -51dBc and ALT2 of -52dBc (6-carrier TD-SCDMA signal)

RoHS-compliant
All these devices are RoHS-compliant, have internally-matched inputs and outputs, and are available on tape and reel. They operate from bias voltages of 26V to 32V. All except the MRF6S21100H and the MRF7S19080H are housed in Freescale's over-molded plastic packages with a temperature rating of 200C.

The MW6IC2240NB, MRF7S19080H, MHV5IC2215N, MRF6S21060N, MRF6S21100N, MRF6S21100H and MW6IC2015NB are in full production and available today.




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