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Samsung begins production of 1Gbit DRAM at 60nm

Posted: 05 Mar 2007 ?? ?Print Version ?Bookmark and Share

Keywords:Samsung Electronics? 60nm process? 60nm? 1Gbit DRAM? recess channel array transistor?

Capitalizing on the increasing demand for large density DRAMs, Samsung Electronics Co. Ltd has started mass production of the industry's 'first' 1Gbit DDR2 DRAM using 60nm process technology.

The 60nm 1Gbit DRAM-based modules from Samsung include 512Mbyte, 1Gbyte and 2Gbyte densities supporting either 667Mbps or 800Mbps speeds with customer validation.

Samsung's continuous technology migration below 90nm has relied heavily on its extensive use of 3D transistor technologies to build smaller chips and achieve finer circuit designs and higher yields.

A key technology used to develop Samsung's 3D transistor is a recess channel array transistor (RCAT) that builds the DRAM cell three-dimensionally to minimize its size while increasing its density. The proprietary RCAT technology from Samsung doubles the refresh cycle, which is critical for enabling efficient fabrication on a nanometer scale. Samsung has been using RCAT for DRAM fabrication from 90nm and plans to use it also for 50nm and lower processes.

Samsung also uses metal-insulator metal (MIM) for its capacitors to provide enhanced data storage in its sub-70nm designs. Moreover, Samsung employs a selective epitaxial growth (SEG) technology for its DRAM fabrication. The SEG technology provides for a broader electron channel and optimizes the speed of each chip's electrons to reduce power consumption and enable higher performance.

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