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SMIC, MoSys expand foundry agreement

Posted: 19 Mar 2007 ?? ?Print Version ?Bookmark and Share

Keywords:flash memory? Intellectual property? MoSys? CMOS? foundry?

Intellectual-property (IP) specialist MoSys Inc. has extended its existing agreement with China's Semiconductor Manufacturing International Corp. to include MoSys' new high-density embedded flash memory IP, the company said Wednesday (March 14). Financial details were not disclosed.

Under the terms of the agreement, MoSys and SMIC will collaborate on the establishment of MoSys' 1T-FLASH on SMIC's manufacturing processes. MoSys' 1T-FLASH is a high density NOR flash replacement and is being implemented on SMIC's pure logic CMOS processes, the company said.

The 1T-FLASH will offer developers of mobile devices, such as cellular phones, and developers of embedded microcontrollers significant cost advantages over current-generation solutions, according to MoSys.

"Together with SMIC, we can offer a very compelling solution for SoC designers who want to integrate large amounts of high-performance flash memory," said Chet Silvestri, president and CEO of MoSys, in a statement.

- Dylan McGrath
EE Times

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