Anadigics, KSND to build a GaAs fab in China

Anadigics Inc. announced an investment contract with Kunshan New and Hi-Tech Industrial Development Zone (KSND) to jointly construct a 6-inch gallium arsenide (GaAs) IC fab in Kunshan City, Jiangsu Province, China. The fab aims to expand the company's wafer fabrication capacity beyond its primary fab located in Warren, New Jersey.

The company is expected to invest approximately $10 million to $15 million over a two-year period commencing in Q4 this year through an initial production phase projected in Q1 2009. Total investment over the life-term of the facility, which could extend up to 50 years, is estimated at $49.88 million.

"This project is expected to provide us with an attractive cost structure and to enable us to meet our future fab capacity needs thereby contributing to the growth of our company, as well as providing us with increased access to one of the fastest-growing markets for wireless and broadband communications," said Bami Bastani, president and CEO of Anadigics.