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RF transistor suits WiMAX applications

Posted: 22 May 2007 ?? ?Print Version ?Bookmark and Share

Keywords:RF power transistor? WiMAX applications? GaN-on-Si power transistors?

Nitronex Corp. has developed a 28V, 100W GaN high electron mobility transistor (HEMT) for WiMAX applications.

Designed using Nitronex's SIGANTIC NFR1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3-2.7GHz WiMAX apps. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64QAM 3.75, 8 burst, 3.5MHz channel bandwidth, 10.3dB PAR at .01 percent probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5dB of gain (typical), 21 percent efficiency, and less than 2.5 percent EVM, at >10W of power.

NPT25100 is housed in a thermally enhanced Copper Moly Copper package that will be offered in bolt-down and pill versions. The device is Pb-free and RoHS compliant.

The 1,000-piece suggested price for the parts is $90. Samples and application boards will be available starting in June followed by full production qualification in July.

- Gina Roos

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