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RF/Microwave??

Transistor manages 300W over full UHF band

Posted: 01 Jun 2007 ?? ?Print Version ?Bookmark and Share

Keywords:UHF transistor? power transistor? digital broadcasting? LDMOS transistors?

NXP Semiconductors introduces BLF878, said to be the first true 300W UHF transistor in high voltage generation 6 LDMOS that promises to deliver 300W over the full UHF band with high linearity and ruggedness. The power transistor is targeted at the TV transmitter/broadcast market.

Today's high-performance TV transmitters constitute serious investments and broadcasters seek to use the maximum power available to transmit huge amounts of data necessary to beam DVB-H in handsets" target=_blank>DVB-T and DVB-H programming to our homes. NXP claims the BLF878 UHF Power LDMOS transistor enables this, maximizing power output from available input and increasing efficiency to 55 percent constant wave and 32 percent for digital broadcasting, enabling huge cost savings for broadcasters.

"Manufacturers of broadcast equipment are under increasing pressure to deliver richer content to our screens, putting greater strain on transmitters with costs often spiraling out of control," said Guido Bekkers, worldwide marketing manager of RF power broadcast and microwave. "Although our input is perhaps the smallest in actual size, the difference made to the bottom line is significant when you consider the expenditure involved."

The BLF878 UHF Power LDMOS transistor is a highly robust solution capable of withstanding the rigors of high-performance broadcast operations with a voltage standing wave ratio of 10:1.

NXP also tipped that it will introduce a new family of 50V high voltage LDMOS transistors in the fourth quarter of 2007 aimed at the ISM (industrial, scientific and medical) market.

The BLF878 UHF Power LDMOS transistor will be sampling to selected customers in the third quarter and will be ramping up in Q4.




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