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LDMOS RF power transistor delivers 1kW output

Posted: 06 Jun 2007 ?? ?Print Version ?Bookmark and Share

Keywords:LDMOS? RF power transistor? MOSFET? transistor?

Freescale Semiconductor unveiled what it claims as the highest power LDMOS RF power transistor, the MRF6VP11KH that delivers pulsed RF output power of 1kW at 130MHz. The new member of Freescale's VHV6 LDMOS technology features the highest drain efficiency and power gain, said Freescale.

The transistor is the latest offering under Freescale's portfolio of RF power solutions for industrial, scientific and medical markets. The part operates at 50V, offers distinct advantages over bipolar and MOSFET devices and provides the power required for equipment such as MRI systems, CO2 lasers, plasma generators and other systems.

The high gain at high power level significantly reduces the number of parts required by up to 70 percent vs. traditional designs. This part count reduction decreases board space requirements and manufacturing complexity, resulting in lower amplifier costs.

Efficient performance
MRF6VP11KH delivers 65 percent drain efficiency. When combined with gain of more than 27dB, this level of efficiency enables dramatic reductions in amplifier design complexity, gain stages, parts count and circuit board real estate, said Freescale.

An application requiring 2kW pulsed output power and 45dB of gain typically requires a 15W pre-driver, two 15W drivers and eight final amplifiers when using MOSFETs or bipolar devicesa total of three stages and 11 devices. But a design based on the MRF6VP11KH requires only three devices. A single 10W LDMOS driver and two MRF6VP11KH final amplifiers produce the same output power and a higher gain of 50 dB.

Moreover, the 50V bias voltage employed by the MRF6VP11KH produces higher terminal impedances for a given power level, which makes the device easier to match into an amplifier circuit. The thermal resistance of Freescale's RoHS compliant, air-cavity package was measured at less than 0.13o C/W JC, providing efficient thermal management and reducing heat sink size. MRF6VP11KH has integrated ESD protection, which eliminates the need for special handling procedures beyond those routinely observed in electronics manufacturing.

Samples of the MRF6VP11KH and a supporting reference design are available now from Freescale.




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