GaN HEMT targets radar, medical apps

Toshiba America Electronic Components Inc. has released the TGI8596-50 transistor targeted for radar systems and medical applications. The X-band device is an internally matched gallium nitride (GaN) semiconductor high-electron mobility transistor (HEMT) power amplifier that operates in the 8.5-9.6GHz range with output power of 50W. The device features a 3dB compression point of 47.5dBm(1) (typical), linear gain of 9.0dB(1) (typical) and drain current of 4.5A(1) (typical).

The main end applications for the new amplifier are radar systems and medical tools, including devices for the treatment of cancer.

Samples are now available.

- Emily Gleason
eeProductCenter